A Brief Note On Book Device Application Is The Standard Material For Random Access Memory

1027 Words Sep 27th, 2016 5 Pages
Multiferroic Magnetoelectric Nanostructures for Novel Device Application is a published research paper by members of the Materials Research Society. This discourse community’s purpose is to inform engineers, usually electrical engineers, about new electronic materials and their applications. In this article, three Northeastern University and one Pennsylvania State University academics describe the use of magnetoelectric nanostructures in modern technology. The technology industry is quickly adopting magnetoelectric nanostructures as the standard material for random access memory (RAM). Random Access Memory is an essential component of computing devices, in other words, it is required for any device like a computer, smartphone, tablet, or even a wireless door lock. Random access memory enables electronic devices to remember previous operations. As technology improves, devices are now required to do more operations at the same time. Therefore, random access memory requires more capacity when technology improves. The material has to be denser in order to improve capacity. Magnetoelectric nanostructures is the new material that researchers within the discourse community have been studying to improve the capacity of random access memory. Ultra-high density disk drives are hard disk drives that store information on a computer. Like random access memory, there is a necessity within the technology industry to make ultra-high density disk drives. Companies from multinationals to…

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