A scanning electron microscope is a type of electron microscope that produces images of topography and composition by scanning a sample with a focused beam of electrons. Samples can be observed in high vacuum, low vacuum, in wet conditions, or at elevated temperatures. The images in this paper were obtained by the detection of secondary electrons that were emitted by atoms excited by the primary electron beam. The primary beam scans in a raster fashion, making horizontal passes across the x-axis one at a time. This allows the detector to display the information into the image on pixel at a time in synchronized manner. The number of secondary electrons that can be detected …show more content…
Silicon Pillars Viewed at 30 Degrees.
In this image, the sample was rotated 30 degrees inside of the scanning electron microscope. Figure III and Figure IV were both obtained at the same imaging conditions, except for angle of view. The beam energy is 20.0 kV meaning the electrons have an energy of 20.0 keV. The spot size is 4.5 nm. The working distance is 9.4 mm. The horizontal field width is 0.27 mm. The magnification is 500 times.
The scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS) provides vast information about the surface composition and elemental composition of nanostructures. In the images produced in Figures II, III, and IV, we have defined pillars likely produced by laser ablation of a pure silicon sample in a solution of SF6 or HCl. The treatment of these silicon samples with a base produced the defined square macropores in Figures III and IV. The images produced were very helpful in determining a possible mechanistic explanation to the