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6 Cards in this Set
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A silicon sample (ni = 1.5E10 cm^-3) is fabricated such that the hole concentration is po = 2E-17 cm^-3 at 300 K. Should Boron or Arsenic atoms be added to the intrinsic silicon? |
Boron should be added because it's P-type.
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A silicon sample (ni = 1.5E10 cm^-3) is fabricated such that the hole concentration is po = 2E-17 cm^-3 at 300 K. What concentration of impurity atoms must be added? |
2E-17 cm^-3 atoms
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A silicon sample (ni = 1.5E10 cm^-3) is fabricated such that the hole concentration is po = 2E-17 cm^-3 at 300 K. What is the concentration of electrons? |
Ni^2 = Po*No No = ((1.5E10 cm^-3)^2)/2E17 cm^-3 = 1125 cm^-3 |
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Consider a silicon pn junction (ni = 1.5E10 cm^-3). The N-region is doped to a value of Nd = 10^16 cm^-3. The built-in potential barrier is to be Vbi = 0.712 V at 300 K. Determine the required p-type doping concentration to achieve the desired Vbi. |
Ni = 1.5E10 cm^-3 Nd = 10^16 cm^-3 Vbi = 0.712 V = Vt*ln((NaNd)/Ni^2) 0.712 V = 0.026*ln((Na*10^16 cm^-3)/((1.5E10 cm^-3)^2) Na = 1.7593E16 cm^-3 |
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Consider a silicon pn junction (ni = 1.5E10 cm^-3). The N-region is doped to a value of Nd = 10^16 cm^-3. The built-in potential barrier is to be Vbi = 0.712 V at 300 K. Sketch the general IV characteristics of a pn junction. Identify the turn on voltage and the regions of reverse and forward bias. |
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For the circuit shown, if Vy = 0.7 V, find Vo and Id. |
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