Chapter 10 Test

Front 1

_____________ is the impurity level within the band gap of a semiconductor associated with the electron holes introduced by the incorporation of a Group II or III element into a Group IV semiconductor.

Back 1

acceptor level

Front 2

___________ is the forbidden range of electron energy levels located between the top of the valence band and the bottom of the conduction band in a semiconductor or insulator.

Back 2

band gap

Front 3

___________ refers to a solid-state semiconductor device composed of three layers of doped material-either npn or pnp-often used as an amplifier.

Back 3

bipolar junction transistor

Front 4

____________ is the band of permissible electron energy levels located above, but separated by the band gap from, the valence band.

Back 4

Conduction band

Front 5

______________ is an intrinsic materials property that describes the ease with which electric charge is transported through a material in response to an external electric field. "

Back 5

conductivity

Front 6

___________ is a material, often a metal, with a high conductivity. These materials are able to transport electrical charge efficiently.

Back 6

Conductor

Front 7

_____________ is a band of electron energy levels that is (usually) completely filled and is located closer to the nucleus than either the valence or conduction bands.

Back 7

core band

Front 8

___________ is an impurity level within the band gap of a semiconductor associated with the extra electrons introduced by the incorporation of a Group V or Vl element into a Group IV semiconductor.

Back 8

donor level

Front 9

__________ is the average velocity with which an electrical charge carrier moves through a solid in response to an external electric field.

Back 9

drift velocity

Front 10

_________ is an electrical conduction resulting from the incorporation of dopant atoms into a semiconductor such as pure Si, Ge, or GaAs.

Back 10

extrinsic conduction

Front 11

____________ is a mathematical function that describes the probability that a specific electron energy level is occupied at a given temperature.

Back 11

Fermi-Dirac distribution function

Front 12

____________ is the electron energy level that has a 50% chance of containing an electron at any temperature.

Back 12

Fermi energy

Front 13

_____ is an empty electron level within a nearly filled band of electron levels.

Back 13

Hole

Front 14

________________ are a collections of pn junction diodes, bipolar junction transistors, and other devices linked together to form microelectronic circuits ranging in complexity from a simple amplifier to a complete miniature digital computer known as a microprocessor.

Back 14

Integrated circuits

Front 15

_______________ is the electrical conduction in pure semiconductors such as Si, Ge, and GaAs.

Back 15

Intrinsic conduction

Front 16

_________________ is the average time between scattering events during the motion of charge carriers in response to an external electric field.

Back 16

Mean time between collisions

Front 17

_____________ is a materials property that describes the ease of charge carrier motion in response to an external electric field. It is defined as the average charge carrier velocity divided by the electric field strength.

Back 17

Mobility

Front 18

________ is a class of extrinsic semiconductors containing dopant atoms with more than four valence electrons.

Back 18

n-type

Front 19

_________ is the relationship between voltage, current, and resistance which fias the general form V = IR

Back 19

Ohm's Law

Front 20

__________ is a class of extrinsic semiconductors containing dopant atoms with fewer than four valence electrons.

Back 20

P-type

Front 21

___________________ refers to a microelectronics device com-posed of adjacent layers of p-type and n-type semi- conductors that serves to pass current in one direction while (essentially) blocking current in the opposite direction.

Back 21

pn junction diode

Front 22

________ is the interaction between an electron and a hole that results in the loss of both charge carriers.

Back 22

Recombination

Front 23

____________ is the intrinsic materials property that describes the ability of a material to resist, or oppose, the transport of electrical charge in response to an external electric field.

Back 23

Resistivity

Front 24

___________ is a class of materials that show an increase in electrical conductivity as the temperature increases

Back 24

Semiconductor

Front 25

___________ is a state of matter in which there is no resistance to the motion of electrical charge carriers.

Back 25

Superconductivity

Front 26

_________________________ is the materials property that describes the magnitude of the change in the resistivity of a conductor resulting from a change in temperature.

Back 26

Temperature coefficient of resistivity

Front 27

_____________ is a set of values ranging from ° to I that describe the relative contributions of anions, cations, electrons, and holes in the transport of electrical charge through a solid.

Back 27

Transference numbers

Front 28

_____________ is the highest-energy electron band that is at least partially filled at 0 K.

Back 28

Valence band