Dopant

Being a relatively new element when compared to many other known elements, Germanium has only been documented element since 1886. It has little to offer in the way of health benefits, but it still remains a useful element. Chemical Properties Germanium is the thirty-second element in the periodic table represented with the symbol Ge. It is located in the fourth period under group fourteen. Along with other elements like Silicon and Arsenic, Germanium is a metalloid. As a metalloid, Germanium shares characteristics of both metals and non-metals. This is what makes Germanium a semi-conductor. Meaning, that under certain circumstances it can carry an electrical charge. In its natural state, Germanium is a brittle solid which has a shiny metallic gray-white appearance to it. Discovery The element Germanium was discovered relatively late compared to most elements. It would not be discovered until the mid 1800’s. There are two notable chemists who played a large role in its discovery; Dmitri Mendeleev and Clemens Winkler. Dmitri Mendeleev Dmitri Mendeleev was a Russian chemist who utilized the periodic table to predict properties of a handful of elements that had not yet been discovered. At that time, 1863, there were only 56 known elements to have existed. Current rate of elemental discovery was about one element per year. In 1869, Mendeleev predicted the element Germanium and some of its chemical properties. He called it ekasilicon. Regardless of how accurate his predictions…

nitrate tetrahydrate) and Al (NO3)2.9H2O (aluminum nitrate nonahydrate) (Merck) are used as a precursor. ZnO precursor solution with the concentration of 0.15 M was made by dissolving 0.89 grams of powder precursor Zn(NO3)3.4H2O in 40 ml of solvent. Solvent comprises a mixture of 30 ml deionized water and 10 ml of ethanol. To speed up the process of dissolution, the mixture was stirred using a magnetic stirrer for 30 minutes. The next process is to add the certain amount of urea catalyst to…

Conclusion: We will need a lower pre-deposition temperature in order to increase the tpredep. Or we could just simply use ion implantation to have a lower dose of dopant for the process. 6/ Since this is a furnace means that it will always at high temperature so it would be inefficient to just using the sources at solid because it took time to sublime that solid and turn it into gaseous state for diffusion sources. The best efficient way is to use a gaseous diffusions sources. We got 2…

trichloride hexahydrate (CrCl3 • 6H2O), depending on the desired doping concentrations (0.25 wt. %, 0.50 wt. %, 0.75 wt. %, and 1.0 wt. %) was mixed with precursor solution. The resulting solution was sprayed on the glass substrates preheated to 300 ˚C. Chromel–alumel thermocouple was used to measure the substrate temperature, by placing at the center of the hot plate using a digital INDFUR PID temperature controller, with an accuracy of ± 5 C. The nozzle-substrate distance was kept fixed at 30…

thin films can be prepared by several different methods such as reactive sputtering [29], chemical vapor deposition (CVD) [30], and sol–gel techniques. Out of these techniques, the sol–gel process is widely used for applications due to its simplicity and low processing cost. Besides, This process can be useful to deposit a thick film on demand, and the chemical composition can be easily controlled [9,31,32]. In this study, sol–gel method was used to produce TiO2/WO3-based chlorine or nitrogen…

45% of its weight at 199-252 oC this was in agreement with Freire et al. and Jandura et al. reports [41, 44], who explained the early decomposition of fatty acyl cellulose with long chain substitution (C11-C18) by the decrease in the degree of crystallinity of esterified cellulose. Then, TCSt lost about 25% at temperature range 255-350 and 460 oC due to the pyrolysis of the esterified and the non-esterified parts of cellulose. Furthermore, pure PANI shows three major stages for thermal weight…

assembly, the ability to be deposited on inexpensive substrates or building materials, the ease of mass production, and the high suitability to large applications. In solar cell production the silicon has dopant atoms introduced to create a p-type and an n-type region and thereby producing a p-n junction. This doping can be done by high temperature diffusion, where the wafers are placed in a furnace with the dopant introduced as a vapour. There are many other methods of doping silicon. In the…

permeability, µʹ of the toroid shaped sample of NZSFO at constant frequency 1 MHz of an AC signal is shown in Fig. 5 (a). The initial permeability increases rapidly with increasing temperature and then drops off sharply near the transition temperature known as Tc showing the Hopkinson effect [35]. A significant peak is obtained near the Tc where the value of K1 becomes almost negligible. At the Tc, complete spin disorder takes place, i.e., a ferromagnetic material converts to a paramagnetic…

The soliton is a charged or a neutral defect in the polyacetylene chain that propagates down the chain, thereby reducing the barrier for interconversion. • The mechanism followed by polyacetylene for the transfer of charge from one chain to another is called intersoliton hopping. • In n-type doping soliton is a resonance stabilized Polyenyl anion of approximately 29 to 31 CH units in Length, with highest amplitude at the centre of the defect. The solitons (anions) transfer electrons to a neutral…

total electrical conductivity can be determined from the Wagner polarization technique [72]. From the plot of polarization current against time in Figure 4.21, the transference numbers of ion [t_(ion )=(I_i-I_f)/I_i)] and electron [t_ele=I_(f )/I_i] for PCL5 electrolyte were calculated. The current decays immediately and asymptotically approach steady state with time. The ionic transference number was found to be ~0.93 in this electrolyte system. Figure 4.21 Polarization current versus time of…