SiO2 is the material that is commonly used as an anti-reflection coating for the solar cells. It is well known and was investigated in the path. In this thesis it is regarded, as one of the possible methods to improve the performance just by adding anti-reflection layer. For the SHJ solar cell additional layer of such material at the top of the structure may enhance the efficiency of the device. The main idea is to apply at the top of the flat structure the layer of etched SiO2, which can form the pyramidal structure.
The pyramids of SiO2 material are regarded with Raytracer. Therefore, the interface with thin-film layers, which are the part of TMM simulation, is located between SiO2 pyramids and the flat bulk of Silicone, as it is shown at …show more content…
The domain sizes were calculated from height and angle …show more content…
The short-circuit current density for the flat SHJ with SiO2 peridical pyramids imprint, with reference to the flat case
From Figure 5.y+1. It is seen that there is a range of the angles, where the short-circuit current density with SiO2 imprint can exceed the flat case. The maximum of Jsc can be reached with the upper angle of 900.
The next step is to check if the optimal upper ITO layer thickness is changed due to SiO2 pyramids. For such simulation were regarded the pyramids with such angles at the top: 300, 600,900 and 1200. For each case thickness of the upper ITO layer varied in the range 0.01-0.15μm. Figure 5.y+2. The short-circuit current density for the flat SHJ with SiO2 periodical pyramids imprint, with the variation in upper ITO layer thickness
The results for such simulation are illustrated at the Figure 4.y+2. For all of simulated angles the trend in the behaviour is similar and it is visible that with the SiO2 imprint the optimal thickness of the upper ITO layer shifted to around 40nm. Moreover, at the optimal height it is possible to get the winning in efficiency for any upper angle of the pyramids. However, the maximum it still at
The pyramids of SiO2 material are regarded with Raytracer. Therefore, the interface with thin-film layers, which are the part of TMM simulation, is located between SiO2 pyramids and the flat bulk of Silicone, as it is shown at …show more content…
The domain sizes were calculated from height and angle …show more content…
The short-circuit current density for the flat SHJ with SiO2 peridical pyramids imprint, with reference to the flat case
From Figure 5.y+1. It is seen that there is a range of the angles, where the short-circuit current density with SiO2 imprint can exceed the flat case. The maximum of Jsc can be reached with the upper angle of 900.
The next step is to check if the optimal upper ITO layer thickness is changed due to SiO2 pyramids. For such simulation were regarded the pyramids with such angles at the top: 300, 600,900 and 1200. For each case thickness of the upper ITO layer varied in the range 0.01-0.15μm. Figure 5.y+2. The short-circuit current density for the flat SHJ with SiO2 periodical pyramids imprint, with the variation in upper ITO layer thickness
The results for such simulation are illustrated at the Figure 4.y+2. For all of simulated angles the trend in the behaviour is similar and it is visible that with the SiO2 imprint the optimal thickness of the upper ITO layer shifted to around 40nm. Moreover, at the optimal height it is possible to get the winning in efficiency for any upper angle of the pyramids. However, the maximum it still at