Nanocrystals (NCs) are interesting material, as their electrical and optical properties can be tuned by tuning their size or surface area. They have diverse applications in electrical devices. Nanocrystal thin film transistors (NC TFTs) have been intensively researched, because of their low-temperature processability.1,2 Colloidal NCs are synthesized in a liquid solution containing some stabilizing organic molecules, broadly termed as surfactants, which are bulky and insulating ligands. The individual NCs in the thin film are indeed separated by these ligands, which significantly inhibit the charge transport. One of the simple yet effective ways to enhance the electrical performance of NC TFTs is the ligand exchange approach,2,3 replacing the
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In2O3 NC was formed by direct injection of the precursors solution in a three-neck flask containing alcohol. Briefly, the alcohol solution containing ODA (25.45 g) and ODE (150 mL) was load in a 250 ml three-necked flask, degassed at 120 °C for 2 h, followed by heating at 310 °C. Then, a typical solution precursor containing 0.86 g of InAc and 5.2 g OA in 12.5 mL of ODE was prepared separately by degassing and heating to 120 °C. At this temperature, the solution was evacuated using a vacuum pump and refilled with Ar gas to ensure the complete removal of oxygen and trace water. After a clear, transparent solution was formed, the three-neck flask was then quickly heated to 310 °C. Then, the solution in the two-neck flask was injected rapidly in the three-neck flask. After injection, the temperature of the solution decreased to ∼295 °C. At this state, the temperature was kept constant for 15 min for the growth of the NCs. After that, the flask was cooled by a wet cloth and immersed in a water bath to cool to room temperature. The synthesized In2O3-OA NCs were isolated by precipitation with acetone, centrifuged, and redispersed in hexane. The isolation process was repeated thrice to remove the unreacted
In2O3 NC was formed by direct injection of the precursors solution in a three-neck flask containing alcohol. Briefly, the alcohol solution containing ODA (25.45 g) and ODE (150 mL) was load in a 250 ml three-necked flask, degassed at 120 °C for 2 h, followed by heating at 310 °C. Then, a typical solution precursor containing 0.86 g of InAc and 5.2 g OA in 12.5 mL of ODE was prepared separately by degassing and heating to 120 °C. At this temperature, the solution was evacuated using a vacuum pump and refilled with Ar gas to ensure the complete removal of oxygen and trace water. After a clear, transparent solution was formed, the three-neck flask was then quickly heated to 310 °C. Then, the solution in the two-neck flask was injected rapidly in the three-neck flask. After injection, the temperature of the solution decreased to ∼295 °C. At this state, the temperature was kept constant for 15 min for the growth of the NCs. After that, the flask was cooled by a wet cloth and immersed in a water bath to cool to room temperature. The synthesized In2O3-OA NCs were isolated by precipitation with acetone, centrifuged, and redispersed in hexane. The isolation process was repeated thrice to remove the unreacted