The unique composition and purity of as-deposited SnS2 thin films prepared with different precursor solution volumes from 5 ml to 25ml were determined by EDX analysis as shown in fig 5, which brought out the presence of Tin and Sulfur as elementary components. Two different peaks were observed in the spectrums from fig 5 relevant to the tin and sulfur. The EDX spectra show that the weight percentage for the film prepared at the precursor solution volume of 5 ml is 36.8% and 63.2%, which is approximately equal to their formal stoichiometry. The Atomic percentage of sulfur in SnS2 thin films increases with an increase in precursor solution volumes from 5 to 20 ml. The atomic percentage of tin and sulfur was observed in the precursor solution
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The variation of log resistivity with inverse temperature for SnS2 thin films at different precursor solution volumes was shown in fig 12. The activation energy of SnS2 thin films were calculated as 0.29 eV, 0.09 eV, 0.05 eV, 0.04 eV and 0.10 eV corresponding to 5 ml, 10 ml, 15 ml, 20 ml and 25 ml precursor solution volumes respectively. It was found that the activation energy values decreases with increase in precursor solution volume up to 20 ml and then increases for further increase in precursor solution volume. The decrease in activation energy with increase in precursor solution volume may be attributed to the change in electronic structure corresponding to the increase in thickness values [48]. The activation energy values indicate the presence of shallow donor levels very near the bottom of the conduction band [40]. Vijayakumar et al. [43] reported the similar activation energy values. Voznyi et al. [38] also had reported the similar activation energy values from 0.1 to 0.6 eV for the SnS2 thin films prepared by close-spaced vacuum sublimation …show more content…
Tin disulfide (SnS2) thin films were deposited on amorphous glass substrates for various precursor solution volumes from 5 ml to 25 ml in steps of 5 ml by nebulized spray pyrolysis method. The Hexagonal structure of the films with preferential orientation along (001) plane was confirmed by X-ray diffraction studies. The crystallite size of SnS2 thin films was found to increase with the increase in precursor solution volume up to 20 ml and then it decreased at the precursor solution volume of 25 ml. The scanning electron microscope established the presence of platelet-like shaped grains. The composition elements of tin and sulfur were found to be present and found to be closely nearly to the stoichiometric ratio by EDAX analysis. The thickness of these films was calculated by multiple interference effects. The thickness of SnS2 films increased with an increase in precursor solution volume up to 20 ml and then it decreased to 25 ml. The direct optical band gap values and Urbach energy values were analyzed. The PL spectra exhibited the peaks in the visible region, which shows that these films were a good candidate for photovoltaic application. The electrical properties revealed that all the SnS2 films were found to be n-type semiconductors. The electrical conductivity, Hall mobility and bulk carrier concentration of the samples increased with
The variation of log resistivity with inverse temperature for SnS2 thin films at different precursor solution volumes was shown in fig 12. The activation energy of SnS2 thin films were calculated as 0.29 eV, 0.09 eV, 0.05 eV, 0.04 eV and 0.10 eV corresponding to 5 ml, 10 ml, 15 ml, 20 ml and 25 ml precursor solution volumes respectively. It was found that the activation energy values decreases with increase in precursor solution volume up to 20 ml and then increases for further increase in precursor solution volume. The decrease in activation energy with increase in precursor solution volume may be attributed to the change in electronic structure corresponding to the increase in thickness values [48]. The activation energy values indicate the presence of shallow donor levels very near the bottom of the conduction band [40]. Vijayakumar et al. [43] reported the similar activation energy values. Voznyi et al. [38] also had reported the similar activation energy values from 0.1 to 0.6 eV for the SnS2 thin films prepared by close-spaced vacuum sublimation …show more content…
Tin disulfide (SnS2) thin films were deposited on amorphous glass substrates for various precursor solution volumes from 5 ml to 25 ml in steps of 5 ml by nebulized spray pyrolysis method. The Hexagonal structure of the films with preferential orientation along (001) plane was confirmed by X-ray diffraction studies. The crystallite size of SnS2 thin films was found to increase with the increase in precursor solution volume up to 20 ml and then it decreased at the precursor solution volume of 25 ml. The scanning electron microscope established the presence of platelet-like shaped grains. The composition elements of tin and sulfur were found to be present and found to be closely nearly to the stoichiometric ratio by EDAX analysis. The thickness of these films was calculated by multiple interference effects. The thickness of SnS2 films increased with an increase in precursor solution volume up to 20 ml and then it decreased to 25 ml. The direct optical band gap values and Urbach energy values were analyzed. The PL spectra exhibited the peaks in the visible region, which shows that these films were a good candidate for photovoltaic application. The electrical properties revealed that all the SnS2 films were found to be n-type semiconductors. The electrical conductivity, Hall mobility and bulk carrier concentration of the samples increased with