The purpose of this lab is to use the Deal-Grove model to calculate rate constants, activation energies, and equilibrium solubility concentrations of oxidants in the thermal oxidation of silicon. The silicon will be oxidized in a furnace at varying temperatures and with varying flow rates of wet air. By varying these parameters, the effects of temperature and flow rate on the rate of oxidation can be observed. These values can then be compared with previous results from Deal and Grove to determine the accuracy. The furnace will be run at 800, 900, and 1000 oC. The furnace will be run at 231.5 mL/min for all three temperatures. At 1000 oC the flow rate will also be changed to 282.6 mL/min to determine how flow rate affects oxidation.
