Analysis Of Tetracarboxylic Diimide

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On the basis ofBased on the p-type pentacene and n-type N,N′’-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13), low-voltage organic field-effect transistors (OFETs) and inverters using hafnium (Hf)-based dielectrics were produced and characterized. All Based on the p-type pentacene and n-type N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13), low-voltage organic field-effect transistors (OFETs) and inverters using hafnium (Hf)-based dielectrics were produced and characterized. All the pristine and cyclic olefin copolymer (COC)-passivated HfOX gate dielectrics were deposited by the solution-processed sol–gel chemistry, and organic thin films were deposited on the dielectrics by the neutral cluster beam deposition method. In comparison to the pristine HfOx-based OFETs, the COC-passivated transistors showed better device performance: higher hole and …show more content…
1 shows the molecular structures of pentacene (TCI Co.), PTCDI-C13 (Sigma-Aldrich), and COC (Polysciences Inc.), and a schematic of the CMOS inverter with the energy-level diagram. A series of sequential ultrasonic treatments were applied to clean heavily n-doped Si substrates acting as the gate electrodes for transistors and as the input electrodes for inverters. Approximately 10 nm-thick HfOx films were prepared by spin coating with a HfCl4 precursor solution (nitric acid added to HfCl4 dissolved in absolute ethanol) on the substrates at 5,000 rpm for 30 s and then annealed at 500 °C for 1 h. For the COC passivation the HfOx surface was spin coated with 0.5 wt% COC in toluene with an average thickness of 15 nm. The semiconducting pentacene (50 nm at a rate of ~0.8–1.0 Å/s) and PTCDI-C13 (50 nm at ~1.0–2.0 Å/s) were sequentially deposited onto the dielectric layers using a lab-built NCBD apparatus.19 Finally, the Au (50 nm at ~2–4 Å/s) or LiF (0.7 nm at ~0.1–0.2 Å/s)/Al (70 nm at ~1–2 Å/s) electrodes were deposited on the active layer using a properly shaped shadow

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